Vertically Stacked Triple-Bands Metal-Semiconductor-Metal Structured-Whole Ultraviolet Photodetectors-Reference-Cited by-同舟云学术

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Vertically Stacked Triple-Bands Metal-Semiconductor-Metal Structured-Whole Ultraviolet Photodetectors

Published:2024-08-01 Issue:15 Volume:24 Page:23797-23802
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Lee Ching-Ting¹^ORCID,Weng Shao-Chi²,Lee Hsin-Ying³^ORCID

Affiliation:

1. Department of Electrical Engineering, and the Department of Photonics, Nano-Integrated Circuit Engineering, National Cheng Kung University, Tainan, Taiwan

2. Department of Electrical Engineering, Nano-Integrated Circuit Engineering, National Cheng Kung University, Tainan, Taiwan

3. Department of Photonics, National Cheng Kung University, Tainan, Taiwan

Funder

National Science and Technology Council (NSTC) of Republic of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/7361/10617804/10570179.pdf?arnumber=10570179

Reference16 articles.

1. Aluminum-nanosphere-stacked MgNiO metal-semiconductor-metal ultraviolet photodetectors

2. Deep Ultraviolet C Phototransistors Using Aluminum-Doped Gallium Hafnium Oxide Channel Layer

3. High-performance solar-blind Al0.6Ga0.4N/Al0.5Ga0.5N MSM type photodetector

4. Polarization-Assisted AlGaN Heterostructure-Based Solar-Blind Ultraviolet MSM Photodetectors With Enhanced Performance

5. High-Performance of Al Nanoparticle Enhanced 4H-SiC MSM Photodiodes for Deep Ultraviolet Detection

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