Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition-Reference-Cited by-同舟云学术

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Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition

Published:2021-10 Issue: Volume:877 Page:160291
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Jeong Sang Ha,Vu Thi Kim Oanh,Kim Eun Kyu

Funder

Korea Ministry of Trade Industry and Energy

National Research Foundation of Korea

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference34 articles.

1. Biological effects of high ultraviolet radiation on early earth—a theoretical evaluation;Cockell;J. Theor. Biol.,1998

2. Comparison of β-Ga2O3 thin films grown on r-plane and c-plane sapphire substrates;Liu;Vacuum,2020

3. High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation;Mitra;Nano Energy,2018

4. Stable and self-powered solar-blind ultraviolet photodetectors based on a Cs3Cu2I5/β-Ga2O3 heterojunction prepared by dualsource vapor codeposition;Ma;ACS Appl. Mater. Interfaces,2021

5. Catalyst-free vapor–solid deposition growth of β-Ga2O3 nanowires for DUV photodetector and image sensor application;Xie;Adv. Opt. Mater.,2019

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