An Accurate Drain Current Model of Multichannel Cylindrical High-K HfO2-/Si3N4-Based GAA-MOSFET for SRAM Application-Reference-Cited by-同舟云学术

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An Accurate Drain Current Model of Multichannel Cylindrical High-K HfO₂-/Si₃N₄-Based GAA-MOSFET for SRAM Application

Published:2023-12 Issue:12 Volume:70 Page:6329-6335
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Bhol Krutideepa¹,Jena Biswajit²^ORCID,Nanda Umakanta³^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Sathyabama Institute of Science and Technology, Chennai, India

2. School of Electronics Engineering, Vellore Institute of Technology, Chennai, India

3. School of Electronics Engineering, VIT-AP University, Amaravati, Andhra Pradesh, India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10304090.pdf?arnumber=10304090

Reference18 articles.

1. Inner-Gate-Engineered GAA MOSFET to Enhance the Electrostatic Integrity

2. Improved Switching Speed of a CMOS Inverter Using Work-Function Modulation Engineering

3. Revisiting MOSFET threshold voltage extraction methods

4. CMOS Logic Device and Circuit Performance of Si Gate All Around Nanowire MOSFET

5. Hafnium-based high-k gate dielectrics;huang;Advances in Solid State Circuits Technologies,2010

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