Stacked HZO/α-In<sub>2</sub>Se<sub>3</sub> Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window-Reference-Cited by-同舟云学术

Stacked HZO/α-In₂Se₃ Ferroelectric Dielectric/Semiconductor FET With Ultrahigh Speed and Large Memory Window

Published:2023-06 Issue:6 Volume:70 Page:3071-3075
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huo Jiali¹^ORCID,Zhang Zhaohao¹^ORCID,Zhang Yadong¹^ORCID,Zhang Fan¹^ORCID,Yan Gangping¹^ORCID,Tian Guoliang¹,Xu Haoqing¹^ORCID,Zhan Guohui¹^ORCID,Xu Gaobo¹^ORCID,Zhang Qingzhu¹^ORCID,Yin Huaxiang¹^ORCID,Wu Zhenhua¹^ORCID

Affiliation:

1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

Funder

Ministry of Science and Technology

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10120654.pdf?arnumber=10120654

Reference32 articles.

1. Ab-Initio Simulations of Monolayer InSe and MoS2 Strain Effect: From Electron Mobility to Photoelectric Effect

2. Enhancement of InSe Field-Effect-Transistor Performance against Degradation of InSe Film in Air Environment

3. Exploring Ferroelectric Switching in α‐In 2 Se 3 for Neuromorphic Computing

4. A ferroelectric semiconductor field-effect transistor

5. Hf₀.₅Zr₀.₅O₂ Ferroelectric Embedded Dual-Gate MoS₂ Field Effect Transistors for Memory Merged Logic Applications

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3. Large‐Area Growth of Ferroelectric 2D γ‐In₂Se₃ Semiconductor by Spray Pyrolysis for Next‐Generation Memory;Advanced Materials;2023-12-03

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