Exploring Ferroelectric Switching in α‐In 2 Se 3 for Neuromorphic Computing-Reference-Cited by-同舟云学术

Exploring Ferroelectric Switching in α‐In 2 Se 3 for Neuromorphic Computing

Published:2020-09-09 Issue:45 Volume:30 Page:2004609
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Wang Lin¹²^ORCID,Wang Xiaojie¹²³,Zhang Yishu¹²,Li Runlai¹,Ma Teng¹²,Leng Kai¹,Chen Zhi¹,Abdelwahab Ibrahim¹,Loh Kian Ping¹²^ORCID

Affiliation:

1. Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117543 Singapore

2. Centre for Advanced 2D Materials and Graphene Research Centre National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore

3. Wuhan National Research Center for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China

Funder

Agency for Science, Technology and Research

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202004609

Reference58 articles.

1. Ferroelectric materials for neuromorphic computing

2. Neuro-Inspired Computing With Emerging Nonvolatile Memorys

3. Emerging Memory Devices for Neuromorphic Computing

4. Ferroelectric Analog Synaptic Transistors

5. Ferroelectric FET analog synapse for acceleration of deep neural network training

Cited by 146 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selectable growth and electronic structures of two-dimensional layered InSe and In2Se3 films;Applied Physics Letters;2024-09-09

2. 2D Ferroelectrics and ferroelectrics with 2D: Materials and device prospects;Current Opinion in Solid State and Materials Science;2024-09

3. Quasi-equilibrium growth of inch-scale single-crystal monolayer α-In2Se3 on fluor-phlogopite;Nature Communications;2024-08-29

4. Giant Tunneling Electro‐Resistance in Ultrathin Ferroelectric Tunnel Junctions: The Interface Barrier Gain Mechanism;Advanced Functional Materials;2024-08-20

5. Conformal Neuromorphic Bioelectronics for Sense Digitalization;Advanced Materials;2024-07-09