Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge With Partial Recessed-Gate HEMTs-Reference-Cited by-同舟云学术

Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge With Partial Recessed-Gate HEMTs

Published:2023-06 Issue:6 Volume:70 Page:2975-2980
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Da¹^ORCID,Zheng Li¹^ORCID,Cheng Xinhong¹^ORCID,Shen Lingyan¹^ORCID,Liu Xiaobo¹^ORCID,Liu Shaoyu¹^ORCID,Tian Yufei¹,Feng Junhong¹,Yu Yuehui¹

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Shanghai Rising-Star Program

Science and Technology Commission of Shanghai Municipality

Shanghai Sailing Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10108957.pdf?arnumber=10108957

Reference27 articles.

1. Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate

2. GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

3. Demonstration of a Planar ${{W}}$ -Band, kW-Level Extended Interaction Oscillator Based on a Pseudospark-Sourced Sheet Electron Beam

4. Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy

5. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration