Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate
Author:
Affiliation:
1. Engineering Department, University of Cambridge, Cambridge, CB2 1PZ, United Kingdom
2. Infineon Technologies Americas Corp., El Segundo, California 90245, USA
3. Infineon Technologies Austria AG, 9500 Villach, Austria
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5121637
Reference11 articles.
1. GaN-on-Si Power Technology: Devices and Applications
2. Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform
3. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration
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1. Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping;IEEE Transactions on Electron Devices;2024-01
2. Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge With Partial Recessed-Gate HEMTs;IEEE Transactions on Electron Devices;2023-06
3. 600-V p-GaN Gate HEMT With Buried Hole Spreading Channel Demonstrating Immunity Against Buffer Trapping Effects;IEEE Electron Device Letters;2023-02
4. Ferroelectric domain modulated AlGaN/GaN field effect transistor;Applied Physics Letters;2022-01-17
5. High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain;Applied Physics Letters;2021-07-12
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