Suppression of substrate coupling in GaN high electron mobility transistors (HEMTs) by hole injection from the p-GaN gate
Author:
Affiliation:
1. Engineering Department, University of Cambridge, Cambridge, CB2 1PZ, United Kingdom
2. Infineon Technologies Americas Corp., El Segundo, California 90245, USA
3. Infineon Technologies Austria AG, 9500 Villach, Austria
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5121637
Reference11 articles.
1. GaN-on-Si Power Technology: Devices and Applications
2. Substrate-Coupled Cross-Talk Effects on an AlGaN/GaN-on-Si Smart Power IC Platform
3. Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Suppression of Hot-Electron-Induced Dynamic RON Degradation in p-GaN Gate HEMT Using Active Passivation and Virtual Body;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
2. Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
3. Suppression of Buffer Trapping Effect in GaN-on-Si Active-Passivation p-GaN Gate HEMT via Light/Hole Pumping;IEEE Transactions on Electron Devices;2024-01
4. 650-V GaN-on-Si Power Integration Platform Using Virtual-Body p-GaN Gate HEMT to Screen Substrate-Induced Crosstalk;2023 International Electron Devices Meeting (IEDM);2023-12-09
5. Substrate Biasing Effect in a High-Voltage Monolithically-Integrated GaN-on-SOI Half Bridge With Partial Recessed-Gate HEMTs;IEEE Transactions on Electron Devices;2023-06
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