High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain-Reference-Cited by-同舟云学术

High-performance reverse blocking p-GaN HEMTs with recessed Schottky and p-GaN isolation blocks drain

Published:2021-07-12 Issue:2 Volume:119 Page:023507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Haiyong¹,Mao Wei¹^ORCID,Zhao Shenglei¹,Gao Beiluan¹,Du Ming¹,Zheng Xuefeng¹^ORCID,Wang Chong¹,Zhang Chunfu¹^ORCID,Zhang Jincheng¹,Hao Yue¹

Affiliation:

1. Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Funder

Key Research and Development Program of Shaanxi

Key-Area Research and Development Program of Guangdong Province

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0054370

Reference33 articles.

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2. Matrix converters: a technology review

3. AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

4. Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability

5. Unidirectional AlGaN/GaN-on-Si HFETs with reverse blocking drain

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