Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe<sub>2</sub>P-Type Field-Effect Transistors-Reference-Cited by-同舟云学术

Ab Initio Computational Screening and Performance Assessment of van der Waals and Semimetallic Contacts to Monolayer WSe₂P-Type Field-Effect Transistors

Published:2023-04 Issue:4 Volume:70 Page:2090-2097
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Ning¹^ORCID,Lin Yuxuan Cosmi¹^ORCID,Chuu Chih-Piao²,Rahman M. Saifur³,Wu Tong⁴,Chou Ang-Sheng²,Chen Hung-Yu¹,Woon Wei-Yen⁵,Liao Szuya Sandy⁵,Huang Shengxi³^ORCID,Qian Xiaofeng⁶^ORCID,Guo Jing⁴^ORCID,Radu Iuliana²,Wong H.-S. Philip²^ORCID,Wang Han¹

Affiliation:

1. Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), San Jose, CA, USA

2. Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan

3. Department of Electrical Engineering, Pennsylvania State University, State College, PA, USA

4. Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL, USA

5. Pathfinding, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu, Taiwan

6. Department of Materials Science and Engineering and the Department of Electrical and Computer Engineering, Texas A&M University, College Station, TX, USA

Funder

U.S. National Science Foundation

Semiconductor Research Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://ieeexplore.ieee.org/ielam/16/10081247/10038655-aam.pdf

Reference36 articles.

1. 1.3: Realization of Short Channel Thin Film Transistors with High Mobility IGTO

2. Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier