Hole Mobility Boosters of (110)-Oriented Extremely Thin Body SiGe-on- Insulator (SGOI) pMOSFETs
Author:
Affiliation:
1. Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Bunkyo-ku, Japan
Funder
JSPS KAKENHI, Japan
“Nanotechnology Platform Program” of MEXT, Japan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10159202/10146437.pdf?arnumber=10146437
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4. First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)
5. 2021 IEEE International Roadmap for Devices and Systems Outbriefs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron Mobility Enhancement of (111)-Oriented Extremely Thin Body Ge-on-Insulator nMOSFETs by Flipped Smart-Cut Substrates;IEEE Transactions on Electron Devices;2024-09
2. Performance assessment of a new optimized Junctionless SiSn MOSFET;2023 20th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE);2023-10-25
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