Simulation Study of a Novel Low-Loss N-Channel SOI LIGBT With a Self-Adapted Parasitic Thyristor-Reference-Cited by-同舟云学术

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Simulation Study of a Novel Low-Loss N-Channel SOI LIGBT With a Self-Adapted Parasitic Thyristor

Published:2023-12 Issue:12 Volume:70 Page:6486-6491
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Dai Kaiwei¹^ORCID,Wei Jie¹^ORCID,Wang Junnan¹,Yang Kemeng²^ORCID,Li Zhaoji¹,Zhang Bo¹^ORCID,Luo Xiaorong¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

2. Nanjing University of Posts and Telecommunications, Nanjing, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Sichuan Province

Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10310001.pdf?arnumber=10310001

Reference16 articles.

1. An Ultralow Loss N-channel RB-IGBT with P-drift Region

2. The On-Chip Lateral Super-Junction IGBT in Integrated High-Voltage Low-Power Converters

3. Numerical Analysis of an Ultralow Switching Loss IGBT With an Inner Primary Blocking Junction

4. Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect

5. A low loss SOI lateral trench IGBT and superjunction device with insulated trench barrier

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