Affiliation:
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Funder
National Natural Science Foundation of China
Fundamental Research Funds for the Central Universities
China Postdoctoral Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. An Ultralow Loss N-channel RB-IGBT with P-drift Region
2. 600 V LPT-CSTBT™ on advanced thin wafer technology;haraguchi;Proc IEEE 23rd Int Symp Power Semiconductor Devices ICs,2011
3. Fundamentals of Power Semiconductor Devices
4. High dV/dt Controllability of 1.2 kV TCIGBT through dynamic avalanche elimination;luo;Proc Int Exhib Conf Power Electron Intell Motion Renew Energy Energy Manage,2020
5. Analysis on the low current turn-on behavior of IGBT module
Cited by
9 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献