Analysis on the low current turn-on behavior of IGBT module-Reference-Cited by-同舟云学术

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Analysis on the low current turn-on behavior of IGBT module

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Container-title:12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)
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Author:

Momota S.,Otsuki M.,Ishii K.,Takubo H.,Seki Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6912/18590/00856843.pdf?arnumber=856843

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of IGBT Intelligent Gate Drive and Protection Strategies;IEEE Transactions on Power Electronics;2024-06

2. Device Design Direction of CSTBT for Low Loss and EMI Noise;IEEE Transactions on Electron Devices;2023-12

3. Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect;IEEE Transactions on Electron Devices;2022-06

4. Split-Dummy-Active CSTBT™ for Improving Recovery dV/dt and Turn-on Switching Loss Tradeoff;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

5. A Novel IGBT With Voltage-Clamping for Turn-on Overshoot Suppression Under Hard-Switching;IEEE Transactions on Electron Devices;2021-10

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