Numerical Analysis of an Ultralow Switching Loss IGBT With an Inner Primary Blocking Junction
Author:
Affiliation:
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
Funder
National Natural Science Foundation of China
China Post-Doctoral Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10053598/10035919.pdf?arnumber=10035919
Reference24 articles.
1. Carrier stored trench-gate bipolar transistor (CSTBT)-a novel power device for high voltage application
2. Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor
3. Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect
4. IEGT design criterion for reducing EMI noise [injection enhancement gate transistor]
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