Improved Performance of MoS2 Negative-Capacitance Transistors by Using Hf1-x Al x O y as Gate Dielectric Plus NH3-Plasma Treatment-Reference-Cited by-同舟云学术

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Improved Performance of MoS₂ Negative-Capacitance Transistors by Using Hf_1-xAl_xO_y as Gate Dielectric Plus NH₃-Plasma Treatment

Published:2023-09 Issue:9 Volume:70 Page:4892-4898
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xia Yuqin¹^ORCID,Liu Lu¹^ORCID,Chen Shangde¹^ORCID,Xu Jing-Ping¹^ORCID

Affiliation:

1. School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10227840/10192523.pdf?arnumber=10192523

Reference33 articles.

1. Thermal stability of ultrathin ZrO2 films prepared by chemical vapor deposition on Si(100)

2. Ferroelectricity in hafnium oxide thin films

3. Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

4. Reduction of Electrical Defects in Atomic Layer Deposited HfO2 Films by Al Doping

5. Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

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