Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Field-Effect Transistors
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Queenstown, Singapore
2. Soitec, Bernin, France
Funder
Singapore Ministry of Education
Advanced Research and Technology Innovation Centre (ARTIC) Program
Agency for Science, Technology, and Research (A*STAR) under its Applied Materials-NUS Advanced Materials Corporate Laboratory
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10081247/10044729.pdf?arnumber=10044729
Reference39 articles.
1. Influence of annealing under reducing ambient on properties of ZnO thin films prepared by mist CVD
2. Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories
3. Effect of Post-Thermal Annealing of Thin-Film Transistors with ZnO Channel Layer Fabricated by Atomic Layer Deposition
4. Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell
5. The future of ferroelectric field-effect transistor technology
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