Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM-Reference-Cited by-同舟云学术

Fatigue Mechanism of Antiferroelectric Hf_0.1Zr_0.9O₂ Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM

Published:2023-04 Issue:4 Volume:70 Page:2142-2146
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hsiang K.-Y.¹^ORCID,Lee J.-Y.²,Lou Z.-F.³,Chang F.-S.³,Chen Y.-C.¹,Li Z.-X.³,Liao M. H.⁴^ORCID,Liu C. W.²^ORCID,Hou T.-H.¹^ORCID,Su P.¹,Lee M. H.³^ORCID

Affiliation:

1. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Graduate School of Advance Technology, National Taiwan University, Taipei, Taiwan

3. Institute of Electro-Optical Engineering, National Taiwan Normal University, Taipei, Taiwan

4. Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan

Funder

National Science and Technology Council

Taiwan Semiconductor Research Institute (TSRI) and Nano Facility Center (NFC), Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10032104.pdf?arnumber=10032104

Reference16 articles.

1. Deep Insights into the Failure Mechanisms in Field-cycled Ferroelectric Hf0.5Zr0.5O2 Thin Film: TDDB Characterizations and First-Principles Calculations

2. The effects of oxygen vacancies on ferroelectric phase transition of HfO2-based thin film from first-principle

3. TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

4. Investigation of the endurance of FE-HfO2 devices by means of TDDB studies;florent;Proc IEEE Int Rel Phys Symp (IRPS),2018

5. Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂ films: vacancy generation and lattice dislocation

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic evolution of oxygen vacancies during cycling in antiferroelectric HfxZr1−xO2;Applied Physics Letters;2024-06-10

2. Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit;IEEE Transactions on Electron Devices;2024-04

3. Modeling of Endurance Degradation of Anti-Ferroelectric HF_1-xZR_xO₂ Capacitors;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

4. Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03