Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications-Reference-Cited by-同舟云学术

Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
language:
Short-container-title:

Author:

Hsiang K.-Y.¹,Lee J.-Y.¹,Lou Z.-F.¹,Chang F.-S.¹,Li Z.-X.¹,Liu C. W.²,Hou T.-H.³,Su P.³,Lee M. H.¹

Affiliation:

1. Institute and Undergraduate Program of Electro-Optical Engineering, National Taiwan Normal University,Taipei,Taiwan

2. Graduate School of Advance Technology, National Taiwan University,Taipei,Taiwan

3. National Yang Ming Chiao Tung University,Department of Electronics Engineering and Institute of Electronics,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118311.pdf?arnumber=10118311

Reference15 articles.

1. Novel Opposite Polarity Cycling Recovery (OPCR) of HtZrO2 Antiferroelectric-RAM with an Access Scheme Toward Unlimited Endurance;hsiang;IEEE International Electron Devices Meeting (IEDM),2022

2. Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

3. Physical mechanisms behind the field-cycling behavior of Hf02-based ferroelectric capacitors;peši?;Advanced Functional Materials,2016

4. Fatigue Mechanism of Antiferroelectric Hf_0.1Zr_0.9O₂ Toward Endurance Immunity by Opposite Polarity Cycling Recovery (OPCR) for eDRAM

5. Correlation between Access Polarization and High Endurance (~1012 cycling) of Ferroelectric and Anti-Ferroelectric HtZrO2;hsiang;IEEE International Reliability Physics Symposium (IRPS),2022

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition;Journal of Semiconductors;2024-03-01