Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection-Reference-Cited by-同舟云学术

Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

Published:2023-08 Issue:8 Volume:70 Page:4257-4263
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xu Feifan¹^ORCID,Wang Guobin²,Tao Tao¹^ORCID,Zhuang Zhe¹^ORCID,Yan Qi-Ang³,Zhi Ting⁴,Xie Zili¹,Liu Bin¹^ORCID,Bi Wengang³^ORCID,Xu Ke²,Zhang Rong¹

Affiliation:

1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China

2. Jiangsu Institute of Advanced Semiconductors, Shenyang National Laboratory for Material Science, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China

3. Jiangsu Institute of Advanced Semiconductors, Suzhou, Jiangsu, China

4. College of Electronic and Optical Engineering and the College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing, China

Funder

National Key Research and Development Program of China

National Nature Science Foundation of China

Leading-Edge Technology Program of Jiangsu Natural Science Foundation

Science Foundation of Jiangsu Province

Fundamental Research Foundation for the Central Universities

Solid State Lighting and Energy-Savings Electronics Collaborative Innovation Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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