Affiliation:
1. Southern University of Science and Technology
Abstract
An investigation of electrical and optical properties of InGaN micro-scale light-emitting diodes (micro-LEDs) emitting at ∼530 nm is carried out, with sizes of 80, 150, and 200 µm. The ITO as a current spreading layer (CSL) provides excellent device performance. Over 10% external quantum efficiency (EQE) and wall-plug efficiency (WPE), and ultra-high brightness (> 10M nits) green micro-LEDs are realized. In addition, it is observed that better current spreading in smaller devices results in higher EQE and brightness. Superior green micro-LEDs can provide an essential guarantee for a variety of applications.
Funder
Science and Technology Planning Project of Shenzhen Municipality
High-level University Fund
Subject
Atomic and Molecular Physics, and Optics
Cited by
20 articles.
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