Performance and Short-Circuit Reliability of SiC MOSFETs With Enhanced JFET Doping Design-Reference-Cited by-同舟云学术

Performance and Short-Circuit Reliability of SiC MOSFETs With Enhanced JFET Doping Design

Published:2023-05 Issue:5 Volume:70 Page:2395-2402
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lin Chaobiao¹,Ren Na¹^ORCID,Xu Hongyi¹^ORCID,Sheng Kuang¹^ORCID

Affiliation:

1. College of Electrical Engineering, Zhejiang University, Hangzhou, China

Funder

National Natural Science Foundation of China Youth Fund

“Pioneer” R&D Program of Zhejiang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10106527/10097524.pdf?arnumber=10097524

Reference20 articles.

1. Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT

2. Characterization of $Cdv/dt$ Induced Power Loss in Synchronous Buck DC–DC Converters

3. Simulation, fabrication and characterization of 3300 V/10A 4H-SiC power DMOSFETs;li;Proc 15th China Int Forum Solid State Lighting Int Forum Wide Bandgap Semiconductors China,2018

4. A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

5. Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses

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3. Study on Characteristics and UIS of Hexagonal Planar SiC VDMOSFETs With Varied JFET Width;IEEE Transactions on Device and Materials Reliability;2024-06

4. A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique;Micromachines;2023-12-07

5. Demonstration of a 1200V Periodic Full-P Encapsulated 4H-SiC Trench MOSFET;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27