Forming-Free HfOx-Based Resistive Memory With Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge
Author:
Affiliation:
1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
2. International Joint Innovation Center, Zhejiang University, Haining, China
Funder
Zhejiang Province Natural Science Foundation of China
National Key Research and Development Program of China
Key Research and Development Program of Zhejiang Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10081247/10054424.pdf?arnumber=10054424
Reference22 articles.
1. Ionic doping effect in ZrO2 resistive switching memory
2. Study on Multilevel Resistive Switching Behavior With Tunable ON/OFF Ratio Capability in Forming-Free ZnO QDs-Based RRAM
3. Non-Volatile Flash Memory on Ge With an Oxidation-Induced Self-Assembled Charge Trapping Layer
4. Stabilization of the ferroelectric phase in Hf-based oxides by oxygen scavenging
5. High Performance 400 °C p+/n Ge Junctions Using Cryogenic Boron Implantation
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1. Multi-level forming-free HfO2-based ReRAM for energy-efficient computing;2024 Device Research Conference (DRC);2024-06-24
2. 8F² Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-Diodes With 2 × 10⁵ Self-Rectifying Ratio;IEEE Electron Device Letters;2024-05
3. Area-Efficient Integration of Embedded 0.5F0.5R Hybrid Memory and High Mobility Logic Device on Ge;IEEE Transactions on Electron Devices;2023-10
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