Ionic doping effect in ZrO2 resistive switching memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3364130
Reference26 articles.
1. Conductivity switching characteristics and reset currents in NiO films
2. Identification of a determining parameter for resistive switching of TiO2 thin films
3. Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices
4. Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices
5. $\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
Cited by 167 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The effects of Hf-doping and thermal treatment on the resistive switching properties of rf magnetron sputtered Sm2(1-x)HfxCe2O7 thin films;Materials Science in Semiconductor Processing;2024-10
2. Density functional theory and molecular dynamics simulations for resistive switching research;Materials Science and Engineering: R: Reports;2024-09
3. Improved Resistive Switching Characteristics and Synaptic Functions of InZnO/SiO2 Bilayer Device;Materials;2023-11-24
4. Improved Uniformity of TaOx-Based Resistive Switching Memory Device by Inserting Thin SiO2 Layer for Neuromorphic System;Materials;2023-09-09
5. Exploring the Effects of Mo Doping on Oxygen Vacancy Formation and Uniformity in HfO2- and ZrO2-Based RRAMs;The Journal of Physical Chemistry C;2023-08-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3