Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing-Reference-Cited by-同舟云学术

Fully Ferroelectric-FETs Reservoir Computing Network for Temporal and Random Signal Processing

Published:2023-06 Issue:6 Volume:70 Page:3372-3377
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tang Mingfeng¹^ORCID,Mei Junyao¹^ORCID,Zhan Xuepeng¹^ORCID,Wang Chengcheng¹^ORCID,Chai Junshuai²^ORCID,Xu Hao²^ORCID,Wang Xiaolei²^ORCID,Wu Jixuan¹^ORCID,Chen Jiezhi¹^ORCID

Affiliation:

1. School of Information Science and Engineering (ISE), Shandong University, Qingdao, China

2. Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Shandong Province

Young Scholars Program of Shandong University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10136238/10113733.pdf?arnumber=10113733

Reference28 articles.

1. Temporal data classification and forecasting using a memristor-based reservoir computing system

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3. A Dual-Point Technique for the Entire ID–VG Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

4. Random telegraph noise of deep-submicrometer MOSFETs

5. Impact of gate input pulse width on FeFET-based reservoir computing;wang;Proc Silicon Nanoelectron Workshop,2021

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