An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior
Author:
Affiliation:
1. University of Arkansas, Fayetteville, AR, USA
2. Wolfspeed, Durham, NC, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Medicine
Link
http://xplorestaging.ieee.org/ielx7/8782709/9669092/09795145.pdf?arnumber=9795145
Reference28 articles.
1. More Accurate Miller Capacitor Modeling for SiC Switching Characteristic Prediction in High Frequency Applications
2. Nonlinear Capacitance Model of SiC MOSFET Considering Envelope of Switching Trajectory
3. A physically based scalable SPICE model for silicon carbide power MOSFETs
4. Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs
5. Electro-thermal model of a silicon carbide power mosfet;frifita;Proc 1st Int Conf Electron Eng Renewable Energy,2018
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1. Thermal Characterization of Packaged SiC Devices for High-Temperature Applications;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
2. Characteristics of SiC MOSFET Compact Models Suitable for Virtual Prototyping of Power Electronic Circuits;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22
3. Capacitance Variations and Gate Voltage Hysteresis Effects on the Turn-ON Switching Transients Modeling of High-Voltage SiC MOSFETs;IEEE Transactions on Power Electronics;2023-05
4. A Tutorial on High Density Power Module Packaging;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023
5. Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET;IEEE Transactions on Power Electronics;2023
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