A physically based scalable SPICE model for silicon carbide power MOSFETs
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7922447/7930596/07931077.pdf?arnumber=7931077
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Quasi-Floating Channel-Based SPICE Model for Improving the Modeling Accuracy of SiC MOSFETs With Multiple Device Structures;IEEE Transactions on Power Electronics;2024-11
2. The Role of the Gate Resistance and Device Variability on the Dynamic Performance of Parallel SiC Power MOSFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
3. Refining Accuracy: A Quasi-Floating Channel SPICE Model for Third-Quadrant SiC MOSFET Analysis in Both Planar and Trench Structures;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02
4. Automated Multidisciplinary Analysis And Lab Verification for Silicon-Carbide Based Power Modules;2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE);2024-04-07
5. Simulation Challenges of SiC MOSFET Switching Performance and Reliability;2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2023-09-27
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