Simulation Challenges of SiC MOSFET Switching Performance and Reliability-Reference-Cited by-同舟云学术

Simulation Challenges of SiC MOSFET Switching Performance and Reliability

Published:2023-09-27 Issue: Volume: Page:
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Container-title:2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Author:

Victory James¹,Guitart Jaume Roig²,Krishna Rishi³,Jia Kan⁴,Zurek Dan⁵,Betak Petr⁶,He Canzhong⁷,Lehocky Jiri⁵

Affiliation:

1. Power Solution Group Onsemi,Phoenix,USA

2. Power Solution Group Onsemi,Oudenaarde,Belgium

3. Power Solution Group Onsemi,Kista,Sweden

4. Power Solution Group Onsemi,Shanghai,China

5. Power Solution Group Onsemi,Brno,Czech Republic

6. Power Solution Group Onsemi,Roznov,Czech Republic

7. Power Solution Group Onsemi,Mountain Top,USA

Publisher

IEEE

Link

Reference10 articles.

4. Short Circuit Behavior of SiC MOSFETs;kakarla;Ph D Dissertation,2021

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1. A Physics-Oriented Analysis of SiC Trench MOSFETs Under Gate Switching Stress Test Conditions;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02