Two Mechanisms of Charge Accumulation in Edge Termination of 4H-SiC Diodes Caused by High-Temperature Bias Stress and High-Temperature and High-Humidity Bias Stress-Reference-Cited by-同舟云学术

Two Mechanisms of Charge Accumulation in Edge Termination of 4H-SiC Diodes Caused by High-Temperature Bias Stress and High-Temperature and High-Humidity Bias Stress

Published:2018-08 Issue:8 Volume:65 Page:3318-3325
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Matsushima Hiroyuki^ORCID,Yamada Renichi,Shima Akio

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8416787/08396839.pdf?arnumber=8396839

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