Experimental and Theoretical Study on failure mechanism of Superjunction MOSFET under H3TRB Testing-Reference-Cited by-同舟云学术

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Experimental and Theoretical Study on failure mechanism of Superjunction MOSFET under H3TRB Testing

Published:2024-06-02 Issue: Volume: Page:554-557
ISSN:
Container-title:2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Zhou Tong¹,Ren Min¹,Ren Min²,Zhang Xin³,Liang Siqi¹,Zhou Jianyu¹,Zheng Fang³,Ma Rongyao³,Pi Meng¹,Li Zehong¹,Guo Xinkai²,Zhang Bo¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China,Chengdu,P. R. China

2. Guangdong Institute of Electronic Information Engineering, University of Electronic Science and Technology of China,Guangdong,P. R. China

3. China Resources Microelectronics Co. LTD,Jiangsu,P. R.,China

Funder

Natural Science Foundation of Guangdong Province

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10579539/10579462/10579610.pdf?arnumber=10579610

Reference8 articles.

1. Trench angle: a key design factor for a deep trench superjunction MOSFET

2. Acceleration of temperature humidity bias (THB) testing on IGBT modules by high bias levels

3. The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection

4. Two Mechanisms of Charge Accumulation in Edge Termination of 4H-SiC Diodes Caused by High-Temperature Bias Stress and High-Temperature and High-Humidity Bias Stress

5. Breakdown Voltage Impact on Lifetime of 1200V IGBT modules under H3TRB-HVDC Testing

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