On the Universality of Hot Carrier Degradation: Multiple Probes, Various Operating Regimes, and Different MOSFET Architectures
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8416787/08372954.pdf?arnumber=8372954
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of Hot Carrier Degradation on Total Ionizing Dose in Bulk I/O-FinFETs;IEEE Transactions on Device and Materials Reliability;2024-09
2. A Miraculously Reliable Transistor;75th Anniversary of the Transistor;2023-07-03
3. Analysis of HCD Effects for NMOS Transistor with Technology Scaling;SoutheastCon 2023;2023-04-01
4. A Pragmatic Model to Predict Future Device Aging;IEEE Access;2023
5. Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET;IEEE Journal of the Electron Devices Society;2023
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