A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme-Reference-Cited by-同舟云学术

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A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme

Published:2003-01 Issue:1 Volume:38 Page:155-158
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:en
Short-container-title:IEEE J. Solid-State Circuits

Author:

Igor A.,Trevis C.,Sheikholeslami A.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/4/25961/01158796.pdf?arnumber=1158796

Cited by 106 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Experimental demonstration of combination-encoding content-addressable memory of 0.75 bits per switch utilizing Hf–Zr–O ferroelectric tunnel junctions;Materials Horizons;2024

3. A 1-kb Sub-1 fJ/b Per Access CAM Design Using 40-nm CMOS Process;2023 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS);2023-11-19

4. High-Speed, Low-Power, and Area-Efficient 5T4M Memristor-Based Ternary Content Addressable Memory;IETE Technical Review;2023-11-16

5. A digital 3D TCAM accelerator for the inference phase of Random Forest;2023 60th ACM/IEEE Design Automation Conference (DAC);2023-07-09

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