Ferroelectricity Engineered AlScN Thin Films Prepared by Hydrogen Included Reactive Sputtering for Analog Applications-Reference-Cited by-同舟云学术

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Ferroelectricity Engineered AlScN Thin Films Prepared by Hydrogen Included Reactive Sputtering for Analog Applications

Published:2024-06-15 Issue: Volume:125 Page:29-30
ISSN:
Container-title:2024 IEEE Silicon Nanoelectronics Workshop (SNW)
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Author:

Chen Si-Meng¹,Nishida Hirofumi¹,Hoshii Takuya¹,Tsutsui Kazuo²,Wakabayashi Hitoshi²,Chang Edward Yi³,Kakushima Kuniyuki¹

Affiliation:

1. Tokyo Institute of Technology,Department of Electrical and Electronic Engineering,Yokohama,Kanagawa,Japan

2. Tokyo Institute of Technology,Institute of Innovative Research,Yokohama,Kanagawa,Japan

3. National Yang Ming Chiao Tung University,International College of Semiconductor Technology,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10638791/10638792/10639233.pdf?arnumber=10639233

Reference7 articles.

1. AlScN: A III-V semiconductor based ferroelectric

2. Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities

3. Next generation ferroelectric materials for semiconductor process integration and their applications

4. Reactive sputtering of ferroelectric AlScN films with H₂ gas flow for endurance improvement

5. Characteristics of hydrogenated aluminum nitride films prepared by radio frequency reactive sputtering and their application to surface acoustic wave devices

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