The impact of uniform strain applied via bonding onto plastic substrate on MOSFET performance-Reference-Cited by-同舟云学术

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The impact of uniform strain applied via bonding onto plastic substrate on MOSFET performance

Published:2006-01 Issue:1 Volume:27 Page:58-61
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Bera L.K.,Loh W.Y.,Guo L.H.,Zhang X.W.,Lo G.Q.,Balasubramanian N.,Kwong D.-L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/33147/01561455.pdf?arnumber=1561455

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling and analysis of the effects of the fabrication temperatures on thermal-induced stress and speed performance of nano pMOS transistors;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;2017-01-03

2. New physically based model for thermal induced initial stress in 3D for silicon germanium films after deposition;COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering;2014-10-28

3. Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding;Journal of Electronic Materials;2010-06-24

4. Strain Engineering in Microelectronics;Series in Material Science and Engineering;2007-01-11

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