1. S. Thompson, N. Anand, M. Armstrong, C. Auth, B. Arcot, M. Alavi, P. Bai, J. Bielefeld, R. Bigwood, J. Brandenburg, M. Buehler, S. Cea, V. Chikarmane, C. Choi, R. Frankovic, T. Ghani, G. Glass, W. Han, T. Hoffmann, M. Hussein, P. Jacob, A. Jain, C. Jan, S. Joshi, C. Kenyon, J. Klaus, S. Klopcic, J. Luce, Z. Ma, B. Mcintyre, K. Mistry, A. Murthy, P. Nguyen, H. Pearson, T. Sandford, R. Schweinfurth, R. Shaheed, S. Sivakumar, M. Taylor, B. Tufts, C. Wallace, P. Wang, C. Weber, and M. Bohr, "A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low-k ILD, and 1 μm2SRAM cell," IEEE IEDM Tech. Dig., pp.61-64, 2002.
2. Strained-Si heterostructure field effect transistors
3. A. Shimizu, K. Hachimine, N. Ohki, H. Ohta, M. Koguchi, Y. Nonaka, H. Sato, and F. Ootsuka, "Local mechanical-stress control (LMC): a new technique for CMOS-performance enhancement," IEEE IEDM Tech. Dig., pp.433-436, 2001.
4. Mechanically Strained Strained-Si NMOSFETs