Advanced 200-mm RF SOI Technology exhibiting $78\ \text{fs}\ \mathrm{R}_{\text{ON}}\times \mathrm{C}_{\text{OFF}}$ and 3.7 V breakdown voltage targeting sub 6 GHz 5G FEM-Reference-Cited by-同舟云学术

Advanced 200-mm RF SOI Technology exhibiting $78\ \text{fs}\ \mathrm{R}_{\text{ON}}\times \mathrm{C}_{\text{OFF}}$ and 3.7 V breakdown voltage targeting sub 6 GHz 5G FEM

Published:2022-06-19 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Gianesello F.¹,Fleury A.¹,Julien F.¹,Dura J.¹,Monfray S.¹,Dhar S.¹,Legrand C.A.¹,Amouroux J.¹,Gros B.¹,Welter L.¹,Charbuillet C.¹,Cathelin P.¹,Canderle E.¹,Vulliet N.¹,Escolier E.¹,Antunes L.¹,Granger E.¹,Fornara P.¹,Rivero C.¹,Bertrand G.¹,Chevalier P.¹,Regnier A.¹,Gloria D.¹

Affiliation:

1. STMicroelectronics,France

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9862947/9862948/09863082.pdf?arnumber=9863082

Reference15 articles.

1. Improvements in SOI technology for RF switches

2. Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC

3. Power handling capability of an SOI RF switch

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