Author:
Jaffe Mark,Abou-Khalil Michel,Botula Alan,Ellis-Monaghan John,Gambino Jeffrey,Gross Jeff,He Zhong-Xiang,Joseph Alvin,Phelps Richard,Shank Steven,Slinkman James,Wolf Randy
Cited by
20 articles.
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1. A 7.1 GHz +23.7 dBm OIP3 1-dB NF Cascode LNA for next-generation Wi-Fi using a 130 nm SOI CMOS Technology;2024 37th International Conference on VLSI Design and 2024 23rd International Conference on Embedded Systems (VLSID);2024-01-06
2. Analysis of Airgaps for OFF-State Capacitance Reduction in SOI-CMOS RF Switches;IEEE Transactions on Electron Devices;2023-11
3. Notched gate MOSFET for capacitance reduction in RF SOI technology;2023 IEEE International Conference on Design, Test and Technology of Integrated Systems (DTTIS);2023-11-01
4. Design of Millimeter-Wave Asymmetric Single-Pole Double-Throw Switch in a 45nm SOI CMOS Technology;2023 8th International Conference on Integrated Circuits and Microsystems (ICICM);2023-10-20
5. Improving off-state capacitance of SOI-CMOS RF switches: how good are air microcavities?;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11