LNFET device with 325/475GHz $f_{\mathrm{T}}/f_{\text{MAX}}$ and 0.47dB NFMIN at 20GHz for SATCOM applications in 45nm PDSOI CMOS
Author:
Khokale S.V.1,
Ethirajan T.1,
Kakara H.K.2,
Humphrey B.1,
Shanbhag K.1,
Vanukuru V.2,
Jain V.1,
Jai S.1
Affiliation:
1. GlobalFoundries,USA
2. GlobalFoundries,India
Reference25 articles.
1. Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI
2. PD-SOI CMOC and SiGe BiCMOS Technologiesfor 5G and 6G communications;chevalier;IEEE IEDM,2020
3. FinFET for mm Wave - Technology and Circuit Design Challenges
4. 14-nm FinFET Technology for Analog and RF Applications
5. A highly rugged 19 dBm 28GHz PA using novel PAFET device in 45RFSOI technology;syed;IEEE/MTT-S IMS,2020
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献