FinFET for mm Wave - Technology and Circuit Design Challenges-Reference-Cited by-同舟云学术

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FinFET for mm Wave - Technology and Circuit Design Challenges

Published:2018-10 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Callender Steven,Shin Woorim,Lee Hyung-Jin,Pellerano Stefano,Hull Christopher

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8536738/8550831/08551125.pdf?arnumber=8551125

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems;Applied Physics Reviews;2024-08-19

2. Compact KiKa-Band Frontend PA and LNA in 16nm FinFET for Next Generation Digitally Intensive Arrays;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

3. Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits;ACS Photonics;2024-03-19

4. Radio frequency FinFET bulk silicon technology;New Materials and Devices Enabling 5G Applications and Beyond;2024

5. Silicon Technology Innovation Opportunities for Applications at 0.1 to 1 THz Beyond that for Transistors;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

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