40-nm RFSOI technology exhibiting 90fs RON × COFF and fT/fMAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications-Reference-Cited by-同舟云学术

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40-nm RFSOI technology exhibiting 90fs R_ON × C_OFF and f_T/f_MAX of 250 GHz/350 GHz targeting sub-6 GHz and mmW 5G applications

Published:2023-09-11 Issue: Volume: Page:
ISSN:
Container-title:ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC)
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Author:

Crémer S.¹,Pelloux N.¹,Gianesello F.¹,Mourier Y.¹,Haury G.¹,de Albuquerque T. Chaves¹,Monsieur F.¹,Audouin H.¹,Legrand C. A.¹,Diouf C.¹,Goncalves J. Azevedo¹,Belem Goncalves C.¹,Durand C.¹,Vulliet N.¹,Berthier L.¹,Souchier E.¹,Garcia P.¹,Jan S.¹,Hello M.¹,Rellier M. L.¹,Scheer P.¹,Duriez B.²,Garros X.²,Bordignon T.¹,Paillardet F.¹,Chevalier P.¹

Affiliation:

1. STMicroelectronics,Crolles,38920

2. CEA LETI,Grenoble,38054

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10268496/10268469/10268566.pdf?arnumber=10268566

Reference8 articles.

1. Leading towards Next Generation ”5G" Mobile Services, Leading towards Next Generation "5G" Mobile Services | Federal Communications Commission (fcc.gov);Wheeler

2. 0.13/spl mu/m CMOS SOI SP6T antenna switch for multi-standard handsets

3. PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications

4. A conventional 45mn CMOS node low-cost platform for general purpose and low power applications

5. Advanced 200-mm RF SOI Technology exhibiting $78\ \text{fs}\ \mathrm{R}_{\text{ON}}\times \mathrm{C}_{\text{OFF}}$ and 3.7 V breakdown voltage targeting sub 6 GHz 5G FEM

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