Impact of non-Conducting RF and DC Hot Carrier Stresses on FinFET Reliability for RF Power Amplifiers
Author:
Affiliation:
1. Auburn University,ECE Department,USA
2. Maxlinear,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9862947/9862948/09863173.pdf?arnumber=9863173
Reference5 articles.
1. RF reliability of short channel NMOS devices
2. The Relation Between Degradation Under DC and RF Stress Conditions
3. An empirical model for device degradation due to hot-carrier injection
4. Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses
5. Impact of DC and RF non-conducting stress on nMOS reliability
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nonconducting RF and DC Hot Carrier Stresses in 14/16-nm FinFETs for RF Power Amplifiers;IEEE Transactions on Electron Devices;2023-08
2. Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFET;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
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