Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFET
Author:
Affiliation:
1. Instituto Nacional de Astrofísica,Óptica y Electrónica (INAOE),Electronics Department,Tonantzintla,Mexico
2. Guarín GlobalFoundries Inc.,Malta,NY,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117622.pdf?arnumber=10117622
Reference14 articles.
1. Consistent DC and RF MOSFET Modeling Using an $S$-Parameter Measurement-Based Parameter Extraction Method in the Linear Region
2. Using S-parameter measurements to determine the threshold voltage, gain factor, and mobility degradation factor for microwave bulk-MOSFETs
3. On the RF Extrinsic Resistance Extraction for Partially-Depleted SOI MOSFETs
4. A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parameters
5. off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown
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