280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting $\text{Double-embedded-}G_{max}\text{-core}$-Reference-Cited by-同舟云学术

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280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting $\text{Double-embedded-}G_{max}\text{-core}$

Published:2022-06-19 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
language:
Short-container-title:

Author:

Yun Byeonghun¹,Park Dae-Woong²,Choi Chan-Gyu³,Song Ho-Jin³,Lee Sang-Gug¹

Affiliation:

1. School of Electronic Engineering, Korea Advanced Institute of Science and Technology,Korea

2. School of Electrical Engineering, Kumoh National Institute of Technology,Korea

3. Pohang University of Science and Technology,Department of Electrical Engineering,Korea

Funder

Samsung Electronics Co., Ltd

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9862947/9862948/09863110.pdf?arnumber=9863110

Reference8 articles.

1. A 230–260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak $G_{{\mathrm{max}}}$ -Core

2. Design and Characterization of $H$-Band (220–325$~$GHz) Amplifiers in a 250-nm InP DHBT Technology

3. A 280-/300-GHz Three-Stage Amplifiers in 65-nm CMOS With 12-/9-dB Gain and 1.6/1.4% PAE While Dissipating 17.9 mW

4. A 273–301-GHz Amplifier With 21-dB Peak Gain in 65-nm Standard Bulk CMOS

5. Design of High-Gain Sub-THz Regenerative Amplifiers Based on Double-G max Gain Boosting Technique

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 194-GHz Three-Stage Differential Driver Amplifier Utilizing a Three-Element Embedded Core at Near-fmax Frequencies in 65-Nm CMOS;IEEE Microwave and Wireless Technology Letters;2024-06

2. Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits;ACS Photonics;2024-03-19

3. A 275-GHz InP HBT H-Band Amplifier With Transmission Line-Based Capacitively Coupled Resonator Matching Technique;IEEE Transactions on Terahertz Science and Technology;2023-11

4. Silicon Technology Innovation Opportunities for Applications at 0.1 to 1 THz Beyond that for Transistors;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

5. Perspective on active submillimeter electromagnetic wave imaging using CMOS integrated circuits technologies;Journal of Applied Physics;2023-04-21

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