Design and Characterization of $H$-Band (220–325$~$GHz) Amplifiers in a 250-nm InP DHBT Technology-Reference-Cited by-同舟云学术

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Design and Characterization of $H$-Band (220–325$~$GHz) Amplifiers in a 250-nm InP DHBT Technology

Published:2014-01 Issue:1 Volume:4 Page:56-64
ISSN:2156-342X
Container-title:IEEE Transactions on Terahertz Science and Technology
language:
Short-container-title:IEEE Trans. THz Sci. Technol.

Author:

Eriksson Klas,Gunnarsson Sten E.,Vassilev Vessen,Zirath Herbert

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Radiation

Link

http://xplorestaging.ieee.org/ielx7/5503871/6716106/06583229.pdf?arnumber=6583229

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operating Above f_max/2in Sub-THz/THz Frequencies;IEEE Journal of Solid-State Circuits;2023-09

2. A 280 GHz InP HBT Direct-Conversion Receiver with 10.8 dB NF;2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2023-06-11

3. Design of 230∼250 GHz low noise amplifier based on 70 nm InP HEMT process;J INFRARED MILLIM W;2023

4. 280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting $\text{Double-embedded-}G_{max}\text{-core}$;2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2022-06-19

5. Broadband Waveguid-to-CPWG Transition With Butterfly-shaped Dipole;2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz);2021-08-29

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