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A 230–260-GHz Wideband and High-Gain Amplifier in 65-nm CMOS Based on Dual-Peak $G_{{\mathrm{max}}}$ -Core

  • Published:2019-06 Issue:6 Volume:54 Page:1613-1623
  • ISSN:0018-9200
  • Container-title:IEEE Journal of Solid-State Circuits
  • language:
  • Short-container-title:IEEE J. Solid-State Circuits

Author:

Park Dae-WoongORCID,Utomo Dzuhri RadityoORCID,Lam Bao HuuORCID,Lee Sang-GugORCID,Hong Jong-PhilORCID

Funder

Institute of Civil Military Technology Cooperation

Korea government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 59 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A D-Band Low-Noise and High-Gain Receiver Front-End Adopting Gmax-Driven Active Mixer;IEEE Transactions on Microwave Theory and Techniques;2024-09

2. A 195–244 GHz CMOS self-mixing frequency tripler with >23 dBc fundamental rejection;AEU - International Journal of Electronics and Communications;2024-08

3. A 15.7-dBm 164–270 GHz Power Amplifier with Asymmetric Slotline-Based Series-Parallel Combiner in 130-nm SiGe BiCMOS Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

4. Analysis and Design of Differential Complex Neutralization Power Amplifiers for Efficient-Yet-Linear High Mm-Wave Applications;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

5. A 240-GHz Wideband LNA with Dual $- \text{Peak} -G_{\max}$ Cores and Customized High-Speed Transistors in 40-nm CMOS;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
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