An F-Band Power Amplifier with Skip-Layer Via Achieving 23.8% PAE in FinFET Technology
Author:
Affiliation:
1. Intel Corporation,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9862947/9862948/09863118.pdf?arnumber=9863118
Reference15 articles.
1. An E-Band Compact Power Amplifier for Future Array-Based Backhaul Networks in 22nm FD-SOI
2. A 130-151 GHz 8-Way Power Amplifier with 16.8-17.5 dBm Psat and 11.7-13.4% PAE Using CMOS 45nm RFSOI
3. 24.7 A 15dBm 12.8%-PAE Compact D-Band Power Amplifier with Two-Way Power Combining in 16nm FinFET CMOS
4. A 14.8 dBm 20.3 dB Power Amplifier for D-band Applications in 40 nm CMOS
5. A 109 GHz CMOS Power Amplifier With 15.2 dBm Psat and 20.3 dB Gain in 65-nm CMOS Technology
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1. Systematic Design Methodology for CMOS Millimeter-Wave Power Amplifiers With an E-Band Fully Differential Implementation in 16-nm FinFET;IEEE Transactions on Microwave Theory and Techniques;2024-08
2. Compact KiKa-Band Frontend PA and LNA in 16nm FinFET for Next Generation Digitally Intensive Arrays;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
3. A 2-Way W-Band Power Amplifier With an Isolated Combining Output Network for Power Back-Off Efficiency Enhancement in 16-nm FinFet Technology;IEEE Solid-State Circuits Letters;2024
4. Comparative Performance of 100–200 GHz Wideband Transceivers: CMOS vs Compound Semiconductors;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
5. An 18.6-dBm, 8-Way-Combined D-Band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOS;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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