A New Approach for Reconfigurable Multifunction Logic-in-Memory Using Complementary Ferroelectric-FET (CFeFET)-Reference-Cited by-同舟云学术

A New Approach for Reconfigurable Multifunction Logic-in-Memory Using Complementary Ferroelectric-FET (CFeFET)

Published:2023-08 Issue:8 Volume:70 Page:4497-4500
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang Yuan-Yu¹^ORCID,Huang Po-Tsang²^ORCID,Lee Po-Yi¹,Su Pin¹^ORCID

Affiliation:

1. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

National Science and Technology Council, Taiwan

Featured Areas Research Center Program “Center for Semiconductor Technology Research” through the Framework of the Higher Education Sprout Project by the Ministry of Education, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10194493/10168056.pdf?arnumber=10168056

Reference14 articles.

1. A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation

2. ASAP7: A 7-nm finFET predictive process design kit

3. Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles

4. NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides

5. Monte Carlo Simulation of Switching Dynamics in Polycrystalline Ferroelectric Capacitors

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