A Programmable Logic-in-Memory Architecture Based on 22nm Fully DepletedSilicon on Insulator Technology

Author:

Liu Yihe1ORCID,Wang Junjie1ORCID,Liu Shuang1ORCID,Sun Mingyuan2ORCID,Tang Kai3ORCID,Ren Guohui4ORCID,Zhao Xindi4ORCID,Sun Mingliang5ORCID,Liu Yang1ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, China

2. Beijing China Changfeng Electromechanical Technology Research and Design, China

3. China National Logging Corporation, China

4. Southwest Branch, Southwest Branch, China National Logging Corporation, China

5. School of Cyberspace Security, Beijing University of Posts and Telecommunications, China

Publisher

ACM

Reference12 articles.

1. Yuan-Yu Huang, Po-Tsang Huang, Po-Yi Lee, and Pin Su. 2023. A New Approach for Reconfigurable Multifunction Logic-in-Memory Using Complementary Ferroelectric-FET (CFeFET). IEEE Transactions on Electron Devices (2023). https://ieeexplore.ieee.org/abstract/document/10168056.

2. Non-Volatile Majority Function Logic Using Ferroelectric Memory for Logic in Memory Technology

3. C3SRAM: An In-Memory-Computing SRAM Macro Based on Robust Capacitive Coupling Computing Mechanism

4. Accelerated Addition in Resistive RAM Array Using Parallel-Friendly Majority Gates [J];John Reuben;IEEE Transactions on Very Large Scale Integration (VLSI) Systems,2021

5. A novel in-memory wallace tree multiplier architecture using majority logic;Lakshmi Vijaya;IEEE Transactions on Circuits and Systems I: Regular Papers,2021

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