Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition-Reference-Cited by-同舟云学术

Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

Published:2023-12 Issue:12 Volume:70 Page:6651-6657
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Jie¹^ORCID,Lin Zehao¹^ORCID,Zhang Zhuocheng¹^ORCID,Xu Ke²^ORCID,Dou Hongyi²,Yang Bo²,Charnas Adam¹^ORCID,Zheng Dongqi¹^ORCID,Zhang Xinghang²,Wang Haiyan²,Ye Peide D.¹^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, USA

2. School of Materials Engineering, Purdue University, West Lafayette, IN, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10328902/10253653.pdf?arnumber=10253653

Reference28 articles.

1. High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition

2. Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition

3. Improved Stability With Atomic-Layer-Deposited Encapsulation on Atomic-Layer In₂O₃ Transistors by Reliability Characterization

4. Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack

5. Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors

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4. Temperature Dependent Anomalous Threshold Voltage Modulation of a-IGZO TFT by Incorporating Variant Gate Stresses;ECS Journal of Solid State Science and Technology;2024-06-03

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