Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control-Reference-Cited by-同舟云学术

Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control

Published:2023-04 Issue:4 Volume:70 Page:1989-1995
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mouny Pierre-Antoine¹^ORCID,Beilliard Yann¹,Graveline Sébastien¹^ORCID,Roux Marc-Antoine²^ORCID,Mesoudy Abdelouadoud El¹,Dawant Raphaël¹,Gliech Pierre¹,Ecoffey Serge¹^ORCID,Alibart Fabien¹,Pioro-Ladrière Michel³^ORCID,Drouin Dominique¹^ORCID

Affiliation:

1. Institut Interdisciplinaire d’Innovation Technologique (3IT) and the Institut Quantique (IQ), Université de Sherbrooke, Sherbrooke, QC, Canada

2. Institut Quantique (IQ), Université de Sherbrooke, Sherbrooke, QC, Canada

3. Laboratoire Nanotechnologies, Nanosystèmes (LN2), CNRS UMI-3463, 3IT, Sherbrooke, QC, Canada

Funder

Natural Sciences and Engineering Research Council of Canada

Canada First Research Excellence Fund

Laboratoire Nanotechnologies Nanosystèmes

French–Canadian Joint International Research Laboratory

Centre National de la Recherche Scientifique (CNRS), Université de Sherbrooke, Université de Grenoble Alpes (UGA), École Centrale Lyon (ECL), and Institut National des Sciences Appliquées (INSA) Lyon

Fonds de Recherche du Québec Nature et Technologie

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10048765.pdf?arnumber=10048765

Reference22 articles.

1. Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories

2. Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing

3. Performance characterization of Altera and Xilinx 28 nm FPGAs at cryogenic temperatures

4. Low-temperature coexistence of memory and threshold switchings in Pt/TiOx/Pt crossbar arrays

5. Thermophoresis/diffusion as a plausible mechanism for unipolar resistive switching in metal–oxide–metal memristors

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1. 28 nm FDSOI embedded PCM exhibiting near zero drift at 12 K for cryogenic SNNs;npj Unconventional Computing;2024-09-02

2. Towards scalable cryogenic quantum dot biasing using memristor-based DC sources;Cryogenics;2024-09

3. 28 nm FD-SOI embedded phase change memory exhibiting near-zero drift at 12 K for cryogenic spiking neural networks (SNNs);2024-04-26

4. Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming;Applied Physics Letters;2023-10-16