Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In<sub>2</sub>O<sub>3</sub> FETs Toward Monolithic 3-D Integration-Reference-Cited by-同舟云学术

Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In₂O₃ FETs Toward Monolithic 3-D Integration

Published:2023-04 Issue:4 Volume:70 Page:2052-2058
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liao Pai-Ying¹^ORCID,Zheng Dongqi¹,Alajlouni Sami¹^ORCID,Zhang Zhuocheng¹^ORCID,Si Mengwei¹^ORCID,Zhang Jie¹^ORCID,Lin Jian-Yu¹,Feygelson Tatyana I.²,Tadjer Marko J.²^ORCID,Shakouri Ali¹,Ye Peide D.¹^ORCID

Affiliation:

1. School of Electrical and Computer Engineering and the Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA

2. Electronics Science and Technology Division, United States Naval Research Laboratory, Washington, DC, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10081247/10018145.pdf?arnumber=10018145

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5. Sub-10 nm ultra-thin ZnO channel FET with record-high 561 ?A/?m ION at VDS 1V, high ?-84 cm2/V-s and 1T-1RRAM memory cell demonstration memory implications for energy-efficient deep-learning computing;chand;Proc IEEE Symp VLSI Technol,2022

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1. Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion;IEEE Transactions on Electron Devices;2024-08

2. Enhanced stability in InSnO transistors via ultrathin in-situ AlOx passivation;Applied Surface Science;2024-08

3. Electrical Characteristics of BEOL-Compatible Top-Gate In₂O₃ Transistors;2024 IEEE Silicon Nanoelectronics Workshop (SNW);2024-06-15

4. Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET;Japanese Journal of Applied Physics;2024-05-01

5. Sub-5 nm Ultrathin In₂O₃ Transistors for High-Performance and Low-Power Electronic Applications;ACS Applied Materials & Interfaces;2024-04-27